| PART |
Description |
Maker |
| ADG901BCP-500RL7 ADG901BCP-REEL7 ADG901BRM ADG901B |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, Absorptive/Reflective Switches
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
|
Analog Devices, Inc.
|
| ADG918BRMZ ADG919BCPZ-REEL7 ADG91808 EVAL-ADG918EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches 0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.25 dB INSERTION LOSS
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT
|
Analog Devices, Inc.
|
| ADG904BRU-REEL7 ADG904 ADG904BRU ADG904BRU-500RL7 |
Wideband, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 宽带7 GHz的分贝的CMOS 1.65 V.75 V的隔离，4:1 Mux/SP4T
|
ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
|
| BM60051FV-C BM60051FV-CE2 |
1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage
|
ROHM
|
| BM60013FV-C BM60013FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
Rohm
|
| BM6105FW-LBZ |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
ROHM
|
| BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| TDA8575 TDA8575T |
Ground noise isolation amplifier ISOLATION AMPLIFIER, 20 kHz BAND WIDTH, PDIP16
Ground noise isolation amplifier ISOLATION AMPLIFIER, 20 kHz BAND WIDTH, PDSO16
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| UPC2726T00 UPC2726T-E3 UPC2726T |
1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON
|
NEC[NEC]
|
